دیتاشیت 2SD1618T-TD-E
مشخصات دیتاشیت
| نام دیتاشیت |
2SD1618
|
| حجم فایل |
273.278
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SD1618T-TD-E
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
700mA
-
Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
250MHz
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DC Current Gain (hFE@Ic,Vce):
200@50mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
15V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
30mV@100mA,10mA
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Package:
SOT-89
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tape & Reel (TR)
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Part Status:
Not For New Designs
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Current - Collector (Ic) (Max):
700mA
-
Voltage - Collector Emitter Breakdown (Max):
15V
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Vce Saturation (Max) @ Ib, Ic:
80mV @ 10mA, 100mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 50mA, 2V
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Power - Max:
500mW
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Frequency - Transition:
250MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-243AA
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Supplier Device Package:
PCP
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Base Part Number:
2SD1618
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detail:
Bipolar (BJT) Transistor NPN 15V 700mA 250MHz 500mW Surface Mount PCP
